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  1. Atomistic understanding of interdependence of crystal growth of two seeds embedded in glass

    Recent results showed that during growth, a crystal seed embedded in glass experiences nonuniform forces from the host matrix. This result raised the possibility that during devitrification of glass, the growth of a crystal can be affected by the presence of neighboring crystals. To investigate the nature of any such interdependence of growth of neighboring crystals, atomic scale morphology of two seeds growing in a glass matrix was simulated as a function of their separation and relative misorientation. The results show a coupled rotation of seeds driven by (1) non-uniform forces from the surrounding glass, and (2) mutual interactions betweenmore » the seeds. At small separations and low misorientation, each seed rotates toward perfect alignment, ultimately forming a single crystal. The onset and rate of alignment, as well as subsequent crystal growth, are strongly dependent on the growth temperature. In contrast, at larger separations and higher misorientation, the seeds cannot achieve full alignment before coalescing, resulting in polycrystalline structures.« less
  2. Conductivity Spectroscopy for Investigation and Discovery of Photovoltaic Materials

    Conductivity spectroscopy is an extremely powerful set of methods for probing the properties of optoelectronic materials, especially photovoltaics, where photoconductivity is one of the best spectroscopic proxies for performance. Despite this power, they are substantially less commonly used than time-resolved photoluminescence (for instance) because they tend to be more expensive to implement (THz) and/or require specialized knowledge (GHz) to construct instruments, which are not widely available. The goal of this review is to illustrate the utility of these experiments in the discovery and study of photovoltaic absorber materials and simultaneously make them more accessible to the community by providing amore » central tutorial resource. We provide a comprehensive review of how conductivity spectroscopy has developed over the past decade and been applied in the discovery and development of photovoltaic materials, with a primary focus on emerging solution-processable technologies. Along the way we aim to demystify conductivity spectroscopy with focused tutorial sections that explain the physical models used to fit the data and illustrate how to think about “high-frequency conductivity”.« less
  3. Failure Mode and Effects Analysis (FMEA) for Photovoltaic Inverter

    Photovoltaic (PV) inverters are critical yet vulnerable components in modern energy systems, often acting as reliability bottlenecks that increase the levelized cost of energy (LCOE). To address this, this paper presents a comprehensive Failure Mode and Effects Analysis (FMEA) tailored for PV inverters. Leveraging field data and literature, we identify failure-prone components, such as capacitors,, and relays, and prioritize their risks based on quantitative Risk Priority Numbers (RPNs). The analysis reveals that surge-induced MOV short circuits, capacitor degradation, and environmental cooling fan failures dominate the risk profile. These findings provide a targeted framework for reliability improvement, guiding future efforts inmore » predictive diagnostics, design optimization, and accelerated life testing strategies.« less
  4. Performance Measurement of Emerging 3- and 4-Terminal Tandem Solar Cells

    Tandem solar cells are not limited to the conventional two-terminal (2-T) configuration. Multi-terminal designs like three-terminal (3-T) and four-terminal (4-T) devices have gained increasing attention in the PV community due to their relaxed current-matching requirement between subcells and their potential for enhanced energy yield. However, reliable and standardized methods for evaluating the performance of multi-terminal tandems remain underdeveloped. This work addresses this gap by providing comprehensive measurement guidelines tailored to these advanced configurations. We examine key coupling mechanisms between subcells, including the shared electrical load in 3-T devices and optical luminescent coupling in both 3-T and 4-T devices, to enablemore » accurate and consistent performance evaluation. Furthermore, we propose two stabilized measurement methods for emerging 3-T tandem cells incorporating perovskite subcells: (1) a two-dimensional maximum-power-point tracking (MPPT) approach that continuously tracks both subcells' maximum power points (PMAX) until convergence to stabilized outputs, and (2) a hybrid approach that combines MPPT for one subcell with stabilized current recording under fixed voltage biases near the PMAX of the other, allowing robust extraction of the overall stabilized PMAX (termed “MPPT + asymptotic PMAX scan” method). These methods directly address the dynamic current responses inherent to perovskite-containing tandems, providing a foundation for meaningful and reproducible performance comparisons.« less
  5. Resistivity Distribution and Donor Properties of Antimony-Doped n-Type Czochralski Silicon Ingots

    We investigate antimony (Sb)-doped Czochralski-grown silicon as an alternative n-type substrate for photovoltaic applications, and characterize their axial resistivity distribution, donor properties, and mechanical strength. We find that Sb-doped ingots can achieve a more uniform resistivity distribution along the axial direction compared to P-doped counterparts. Dopant concentration profiles in P-doped ingots can be accurately modelled using the standard Scheil's equation, accounting only for dopant segregation during solidification. In contrast, modelling Sb-doped ingots requires consideration of both dopant segregation and evaporation effects to fit the dopant distribution accurately. Using electron paramagnetic resonance spectroscopy at 9 K, we observe two hyperfine linesmore » in P-doped samples, and six hyperfine lines for Sb121 and eight for Sb123 isotopes, with the number of hyperfine lines governed by the nuclear spins. We further identify two-atom Sb clustering in the Sb-doped wafers, confirmed through simulations of the additional weak electron paramagnetic resonance peaks. Finally, we find that 140 ..mu..m as-cut planar Sb-doped wafers exhibit slightly higher mechanical strength compared to P-doped wafers.« less
  6. LionGlass™: A low‐melting, carbonate‐free alternative to soda lime silicate glass

    LionGlass™ is Penn State University's patent-pending alumino-silicophosphate glass compositional family that offers, for the first time, a viable low-melting, carbonate-free alternative to soda lime silicate glass by (a) lowering the melting temperature by up to 400°C compared to soda lime silicate glass and (b) eliminating the use of carbonate batch materials. The viscosity curve of LionGlass is shifted downward in temperature compared to soda lime silicate glass, enabling melting at much lower temperatures. LionGlass also has significantly improved resistance to crack initiation compared to soda lime silicate glass. Other properties, such as thermal expansion coefficient and optical dispersion curve, aremore » comparable to those of traditional soda lime silicate glass.« less
  7. Charge carrier extraction and recombination effects in GaInAs/GaAsP multi-quantum well solar cells

    The carrier extraction and transport mechanisms as well as the relative contributions of radiative and non-radiative recombination processes are investigated in high-quality strain-balanced GaInAs/GaAsP multi-quantum well solar cells recently implemented in record efficiency multijunction solar cells. A comprehensive suite of complementary characterization techniques including temperature- and suns-dependent photoluminescence and photovoltaic measurements are employed to analyze thermal escape and tunneling rates, which demonstrate the need to move beyond simple drift-diffusion models of p–n junctions. This study examines the processes that best characterize the operation of these devices across varying temperatures using a simple two-diode model, incorporating multiple transport protocols, and providesmore » insights into the performance-limiting processes and pathways for their optimization.« less
  8. Self‐Assembled Monolayer Templating for Engineered Nanopinholes in Passivated Contact Solar Cells

    We present a novel self-assembled monolayer (SAM)-based technique to make nanopinhole-enabled passivated contacts on silicon solar cells by tuning the SAM coverage area and etch selectivity. We deposit trimethyl-silyl Si(CH3)3 groups using hexamethyldisilazane (HMDS) as the precursor over passivating dielectric layers and their stacks (SiO2, SiNx, SiO2/SiNx) and interrupt the HMDS attachment chemistry shortly before a full monolayer is formed on its surface. Subsequent etching in dilute HF produces pinholes through the dielectric layers due to the higher etch resistance of the SAM to HF etching. The pinhole areal density (104–108/cm2) and size (10–1000 nm) can be tuned both bymore » duration of HMDS attachment and HF etch time. Pinholes were characterized by atomic force microscopy, tetramethylammonium hydroxide (TMAH) selective etch, and Ag decoration by electroless plating. Polysilicon (poly-Si) passivated contacts enabled by pinholes were formed by subsequent deposition of doped amorphous silicon (a-Si:H) followed by thermal crystallization and dopant drive-in. At optimal areal pinhole density ≈107/cm2, contacts exhibit both passivation and carrier transport via pinholes as evidenced by electron beam induced current, transmission line measurements, and carrier lifetime measurements. Solar cells based with these pinhole contacts show Voc = 723 mV and FF = 80.3%. The remaining SAM layer does not affect device performance.« less
  9. Characterization of dangling bond defects at the crystalline Si/SiOx interface in a polycrystalline Si passivating contact solar cell at room temperature with electrically detected magnetic resonance spectroscopy

    Monocrystalline silicon solar cells can achieve photoconversion efficiencies exceeding 26%; however, performance-limiting defects that trap carriers continue to be a challenge. In this work, we have characterized Si solar cells with tunneling SiOx/polycrystalline-Si (poly-Si) passivating contacts (TOPCon) on As-doped Czochralski Si wafers with electrically detected magnetic resonance (EDMR) spectroscopy. We fabricated 2 × 20 mm2 TOPCon-like mini solar cells with edge passivation alongside larger 4 cm2 sister cells and obtained similar device characteristics. We performed EDMR spectroscopy at 300 K on two minicells with different degrees of surface passivation based on the recombination parameter, Jo, values of 40 and 310more » fA/cm2. We optimized the resolution and the signal-to-noise ratio of the EDMR response of the minicells by varying the forward bias voltage and the magnetic field modulation amplitude. We detect two distinct signals with EDMR spectroscopy, an axial-like signal at g = 2.009, 2.0087, and 2.0015, and an isotropic signal at g = 2.0024, which we attribute to Si dangling bonds (Pb0 and Pb centers) and boron–oxygen related defects, respectively, at or near the c-Si/SiOx interface. The EDMR signals were lower for the cell with a lower value of Jo, while the ratio of the two defect populations was very similar. The EDMR signal increases with forward bias but drops to zero at bias voltages >0.5 V, consistent with interface defects within or near the boron-doped emitter depletion region. Our study demonstrates a method to fabricate minicells that can be characterized with EDMR spectroscopy to detect industrially relevant defects in TOPCon cells.« less
  10. Solar Cell Performance after Exfoliation Using Sonic Liftoff

    Removing grown device layers from a GaAs substrate is an essential aspect of reducing costs of III–V photovoltaics. While many methods of device layer removal have been explored, Sonic Lift‐off (SLO) demonstrates novel control of the stress conditions within the substrate during exfoliation. By utilizing acoustic energy, this technique allows for a lower maximum stress required to fully lift‐off layers from a substrate. We demonstrate that this technique results in no damage to inverted‐grown and upright‐grown exfoliated devices. The inverted device demonstrated an efficiency of 26.8% after SLO in comparison to 26.5% for a traditionally‐processed cell, and the upright devicemore » showed a 22.0% efficiency after SLO. The SLO process has been shown to produce exfoliated, damage‐free devices and opens the door for substrate reuse to reduce the cost of III–V photovoltaics.« less
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